triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com product data sheet august 5, 2008 1 35 ghz 5-bit phase shifter TGP2102 key features and performance ? frequency range: 32 - 37 ghz ? 7db nominal insertion loss ? 3.5deg rms phase error @ 35ghz ? 0.4db rms amp. error @ 35ghz ? negative control voltage ? single-ended logic ? 0.25m phemt 3mi technology ? chip dimensions: 1.88 x 0.75 x 0.1 mm (0.074 x 0.030 x 0.004 inches) preliminary measured performance 0 1 2 3 4 5 6 7 8 9 10 31 32 33 34 35 36 37 frequency (ghz) rms phase shift error (deg) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 rms amplitude error (db) rms phase shift error rms amplitude error -20 -15 -10 -5 0 5 10 15 20 1 3 5 7 9 1113151719212325272931 state phase error (deg) 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz primary applications ? military radar ? transmit / receive description the triquint TGP2102 is a 5-bit digital phase shifter mmic design using triquint?s proven 0.25 m power phemt process to support a variety of ka-band phased array applications including military radar. the 5-bit design utilizes a compact topology that ac hieves a 1.41mm 2 die area and high performance. the TGP2102 provides a 5-bit digital phase shift function with a nominal 7db insertion loss and 5 rms phase shift error over a bandwi dth of 32-37ghz. the TGP2102 requires a minimum of off- chip components and operates with a - 5v control voltage. each device is rf tested on-wafer to en sure performance compliance. the device is available in chip form. note: datasheet is subject to change without notice. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com product data sheet august 5, 2008 2 TGP2102 table i maximum ratings symbol parameter value notes v c control voltage range -8v to 0v 1/ 2 / i d control supply current 1 ma 1/ 2 / p in input continuous wave power 20 dbm 1/ 2 / p d power dissipation 0.1 w 1/ 2 / t ch operating channel temperature 150 0 c 3/ t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device 2/ combinations of supply voltage, suppl y current, input power, and output power shall not exceed p d at a package base temperature of 70 c 3/ junction operating temperatur e will directly affect the device median time to failure (mttf). for maximum life, it is reco mmended that junction temperatures be maintained at the lowest possible levels. table ii rf characterization table (t a = 25 c, nominal) (v c = -5v) parameter test conditions typ units notes insertion loss 32 ? 37ghz 7 db peak amplitude error 32 ? 37ghz 1 db rms amplitude error 32 ? 37ghz 0.7 db peak phase shift error 32 ? 37ghz 5 deg rms phase shift error 32 ? 37ghz 4 deg input return loss 32 ? 37ghz 14 db output return loss 32 ? 37ghz 7 db note: table ii lists the rf characteristics of typical devices as determined by fixtured measurements. www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com product data sheet august 5, 2008 3 preliminary measured data -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 31 32 33 34 35 36 37 frequency (ghz) s21 (db) 0 1 2 3 4 5 6 7 8 9 10 31 32 33 34 35 36 37 frequency (ghz) rms phase shift error (deg) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 rms amplitude error (db) rms phase shift error rms amplitude error TGP2102 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com product data sheet august 5, 2008 4 preliminary measured data -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 31 32 33 34 35 36 37 frequency (ghz) s11 (db) -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 31 32 33 34 35 36 37 frequency (ghz) s22 (db) TGP2102 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com product data sheet august 5, 2008 5 -20 -15 -10 -5 0 5 10 15 20 135791113151719212325272931 state phase error (deg) 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz preliminary measured data -5 -4 -3 -2 -1 0 1 2 3 4 5 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 state amplitude error (db) 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz TGP2102 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com product data sheet august 5, 2008 6 state table state v -supply v -11.25 v -22.5 v -45 v -90 v -180 phase shift 0 -5v 0v 0v 0v 0v 0v reference 1 -5v-5v0v0v0v0v11.25 2 -5v 0v -5v 0v 0v 0v 22.5 3 -5v -5v -5v 0v 0v 0v 33.75 4 -5v 0v 0v -5v 0v 0v 45 5 -5v -5v 0v -5v 0v 0v 56.25 6 -5v 0v -5v -5v 0v 0v 67.5 7 -5v -5v -5v -5v 0v 0v 78.75 8 -5v 0v 0v 0v -5v 0v 90 9 -5v -5v 0v 0v -5v 0v 101.25 10 -5v 0v -5v 0v -5v 0v 112.5 11 -5v -5v -5v 0v -5v 0v 123.75 12 -5v 0v 0v -5v -5v 0v 135 13 -5v -5v 0v -5v -5v 0v 146.25 14 -5v 0v -5v -5v -5v 0v 157.5 15 -5v -5v -5v -5v -5v 0v 168.75 16 -5v 0v 0v 0v 0v -5v 180 17 -5v -5v 0v 0v 0v -5v 191.25 18 -5v 0v -5v 0v 0v -5v 202.5 19 -5v -5v -5v 0v 0v -5v 213.75 20 -5v 0v 0v -5v 0v -5v 225 21 -5v -5v 0v -5v 0v -5v 236.25 22 -5v 0v -5v -5v 0v -5v 247.5 23 -5v -5v -5v -5v 0v -5v 258.75 24 -5v 0v 0v 0v -5v -5v 270 25 -5v -5v 0v 0v -5v -5v 281.25 26 -5v 0v -5v 0v -5v -5v 292.5 27 -5v -5v -5v 0v -5v -5v 303.75 28 -5v 0v 0v -5v -5v -5v 315 29 -5v -5v 0v -5v -5v -5v 326.25 30 -5v 0v -5v -5v -5v -5v 337.5 31 -5v -5v -5v -5v -5v -5v 348.75 TGP2102 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com product data sheet august 5, 2008 7 mechanical drawing TGP2102 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com product data sheet august 5, 2008 8 gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. chip assembly & bonding diagram TGP2102 www.datasheet.net/ datasheet pdf - http://www..co.kr/
triquint semiconductor texas phone : (972)994-8465 fax: (972)994-8504 web: www.triquint.com product data sheet august 5, 2008 9 gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c. assembly process notes TGP2102 www.datasheet.net/ datasheet pdf - http://www..co.kr/
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